Epitaxial wafers “silicon-on-sapphire” are supplied for the production of pressure sensors used in control-measuring instruments and CMOS integrated circuits.
Application of sapphire in the production of radiofrequency integrated circuits (RFICs) based on SOS wafers makes it possible to avoid capacitive losses, to integrate passive elements into a chip, and to downscale the final device, which increases the performance speed of microcircuits.
