Chemically pure Al₂O₃ powder is used as raw material. Unique technology of raw material preliminary preparation allows to grow sapphire with Al₂O₃ purity up to 99,997%. The whole growing process of 25 kg sapphire crystal takes 14 days and is controlled automatically. Raw material is loaded into the growing station, where the optimum conditions for sapphire crystals growing are maintained.

The essence of the improved Kyropoulos method is that sapphire crystal sprouts deep into the melt and during the process of crystallization is shaped cylindrically due to formation of a shrinkage cavity. Occurrence of the shrinkage cavity is explained by the difference of the densities of the liquid and solid sapphire (3 and 4 g/sm³ accordingly). Maintenance of the required diameter of crystal is carried out due to automatic displacement of the seed crystal (without rotation). During the process the crucible is fixed. The pace of the draw of the crystal is lower than the pace of crystallization. As a result only a small layer adjoining the growing surface not the whole crystal is in the melt. Thermal gradient, which provides the growth of a crystal, is maintained by the furnace construction that gives wedge-shape form to crystallization front.

The melt in crucible is achieved through resistive heating. Decreasing capacity on a heater is carried out with the use of a precision system of capacity adjustment.

Cooling of a crystal occurs practically in the same zone of growth inside the crucible. Such method allows to grow crystals with minimal mechanical stress.