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6th International Conference on Nitride Semiconductor

Monocrystal is pleased to inform about its recent participation in the 6th International Conference on Nitride Semiconductors that was held on August, 29 - September, 3 in Congress Center in Bremen (Germany). This conference takes place every two years; the previous one was in Japan in 2003.

ICNS-6 is the ideal venue to share the latest information in the Nitride Semiconductors industry and besides gives the perfect chance to meet the speakers from the world leading companies involved in this sphere.

The exhibition samples of Monocrystal booth included a wide range of products for GaN epitaxy that can be manufactured by the company, including 6" ั (0001)-plane epi-polished wafers.

In the University of Bremen, that was the organizer of the conference, gathered more than 600 representatives from more than 20 companies from all over the world to discuss the problems and recent innovations in the Nitride industry. The ICNS-6 conference covered all the aspects of group-III nitride semiconductors. Special focus was on:

• Epitaxial growth (MBE, MOVPE, HVPE etc.)
• Bulk crystal growth
• Theory
• Material issues (III-V-N, InN, etc.)
• Structural analysis
• Optical characterization
• Nanostructures
• Devices (LEDs, laser-diodes, transistors, sensors, etc.).

The conference has been widely covered in the local press. Two Bremen papers "Weser Kurier" and "Bremen Nachrichten" published a report pointing out the highlights of the event. Monocrystal’s participation was also mentioned in this article with the picture of Sales Manager Dasha Vitol keeping sapphire wafer in her hands.

Article in German, PDF~268KB